absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 800 v i t(rms) r.m.s on-state current t c = 98 c 16 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 155/170 a i 2 t i 2 t 120 a 2 s p gm peak gate power dissipation 5.0 w p g(av) average gate power dissipation 0.5 w i gm peak gate current 2.0 a v gm peak gate voltage 10 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 2.0 g feb, 2003. rev. 2 features repetitive peak off-state voltage : 800v r.m.s on-state current ( i t(rms) = 16 a ) high commutation dv/dt non-isolated type general description this device is suitable for ac switching application, phase control application such as fan speed and temperature mod- ulation control, lighting control and static switching relay. 2.t2 3.gate 1.t1 symbol 1/5 STP16A80 semiwell semiconductor bi-directional triode thyristor copyright@semiwell semi conductor co., ltd., all rights reserved. to-220 1 2 3
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 2.0 ma v tm peak on-state voltage i t = 25 a, inst. measurement 1.4 v i + gt1 gate trigger current v d = 6 v, r l =10 30 ma i - gt1 30 i - gt3 30 v + gt1 gate trigger voltage v d = 6 v, r l =10 1.5 v v - gt1 1.5 v - gt3 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -8.0 a/ms, v d =2/3 v drm 10 v/ ? i h holding current 25 ma r th(j-c) thermal impedance junction to case 1.4 c/w 2/5 STP16A80
-50 0 50 100 150 0.1 1 10 v + gt1 v _ gt1 v gt (t o c) v _ gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 50 100 150 200 60hz 50hz surge on-state current [a] time (cycles) 0 2 4 6 8 10 12 14 16 18 20 60 70 80 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 t j = 125 o c t j = 25 o c on-state current [a] on-state voltage [v] 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) i gm (2a) 25 p g (av) (0.5w) p gm (5w) v gm (10v) gate voltage [v] gate current [ma] 3/5 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle STP16A80
-50 0 50 100 150 0.1 1 10 i _ gt1 i _ gt3 i + gt1 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 0.1 1 10 transient thermal impedance [ o c/w] time (sec) 4/5 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit a v 10 ? 6v r g a v 10 ? 6v r g a v 10 ? 6v r g test procedure test procedure test procedure STP16A80
dim. mm inch min. typ. max. min. typ. max. a 9.7 10.1 0.382 0.398 b 6.3 6.7 0.248 0.264 c 9.0 9.47 0.354 0.373 d 12.8 13.3 0.504 0.524 e 1.2 1.4 0.047 0.055 f 1.7 0.067 g 2.5 0.098 h 3.0 3.4 0.118 0.134 i 1.25 1.4 0.049 0.055 j 2.4 2.7 0.094 0.106 k 5.0 5.15 0.197 0.203 l 2.2 2.6 0.087 0.102 m 1.25 1.55 0.049 0.061 n 0.45 0.6 0.018 0.024 o 0.6 1.0 0.024 0.039 3.6 0.142 to-220 package dimension 5/5 STP16A80 1. t1 2. t2 3. gate a b c i g l 1 m e f h k n o 2 3 j d c1.0
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